VOLTAGE-CONTROLLED, REACTIVE PLANAR MAGNETRON SPUTTERING OF AIN THIN-FILMS

被引：71

作者：

MCMAHON, R

AFFINITO, J

PARSONS, RR

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571470

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：376 / 378

页数：3

共 8 条

[1] FRASER DB, 1978, THIN FILM PROCESSES, pCH3
[2] DISCHARGE CHARACTERISTICS FOR MAGNETRON SPUTTERING OF AL IN AR AND AR-O-2 MIXTURES
MANIV, S
WESTWOOD, WD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (03): : 743 - 751
[3] HIGH-RATE DEPOSITION OF TRANSPARENT CONDUCTING FILMS BY MODIFIED REACTIVE PLANAR MAGNETRON SPUTTERING OF CD2SN ALLOY
MANIV, S
MINER, C
WESTWOOD, WD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (02): : 195 - 198
[4] SCHILLER S, 1979, 1979 P INT C ION PLA
[5] MAGNETRON SPUTTERING - BASIC PHYSICS AND APPLICATION TO CYLINDRICAL MAGNETRONS
THORNTON, JA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 171 - 177
[6] THORNTON JA, 1978, THIN FILM PROCESSES, pCH2
[7] PLANAR MAGNETRON SPUTTERING
WAITS, RK
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (02): : 179 - 187
[8] WAITS RK, 1978, THIN FILM PROCESSES, pCH2