MASS-FLOW LIMITATIONS IN REACTIVE SPUTTERING

被引:23
作者
BLOM, HO
BERG, S
LARSSON, T
机构
关键词
D O I
10.1016/0040-6090(85)90361-X
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:307 / 313
页数:7
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共 8 条
  • [1] INVESTIGATION OF TIN FILMS REACTIVELY SPUTTERED USING A SPUTTER GUN
    AHN, KY
    WITTMER, M
    TING, CY
    [J]. THIN SOLID FILMS, 1983, 107 (01) : 45 - 54
  • [2] BLOM HO, 1984, UNPUB THIN SOLID FIL
  • [3] THE ANALYSIS AND AUTOMATIC-CONTROL OF A REACTIVE DC MAGNETRON SPUTTERING PROCESS
    ENJOUJI, K
    MURATA, K
    NISHIKAWA, S
    [J]. THIN SOLID FILMS, 1983, 108 (01) : 1 - 7
  • [4] KARLSSON B, 1982, SPIE J, V324
  • [5] ZRN DIFFUSION BARRIER IN ALUMINUM METALLIZATION SCHEMES
    KRUSINELBAUM, L
    WITTMER, M
    TING, CY
    CUOMO, JJ
    [J]. THIN SOLID FILMS, 1983, 104 (1-2) : 81 - 87
  • [6] DIFFUSION BARRIERS IN THIN-FILMS
    NICOLET, MA
    [J]. THIN SOLID FILMS, 1978, 52 (03) : 415 - 443
  • [7] REACTIVELY SPUTTERED ZRN USED AS AN AL/SI DIFFUSION BARRIER IN A ZR CONTACT TO SILICON
    OSTLING, M
    NYGREN, S
    PETERSSON, CS
    NORSTROM, H
    WIKLUND, P
    BUCHTA, R
    BLOM, HO
    BERG, S
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 281 - 283
  • [8] MECHANISM OF RF REACTIVE SPUTTERING
    SHINOKI, F
    ITOH, A
    [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (08) : 3381 - 3384