METALORGANIC VAPOR-PHASE EPITAXY OF CUGAS2 USING DITERTIARYBUTYLSULFIDE AS THE SULFUR SOURCE

Ditertiarybutylsulfide has been used in place of the conventional sulfur source of hydrogen sulfide in metalorganic vapor phase epitaxy (MOVPE) of CuGaS2 Using cyclopentadienyl-triethylphosphine-copper and triethylgallium as copper and gallium sources, respectively. It has been found that the premature reaction of the present sulfur source with the copper and gallium sources is negligible, resulting in a dramatic improvement of layer thickness uniformity. Ditertiarybutylsulfide also has an advantage over dimethyl and diethyl sulfides with respect to a decease in growth temperature in the growth of CuGaS2, implying its potential use in low-temperature MOVPE growth of other sulfide semiconductors such as ZnS.