CORRELATION BETWEEN FOURIER-TRANSFORM-INFRARED (FTIR) SPECTRA AND TEMPERATURE-DEPENDENCE OF DIELECTRIC-PROPERTIES OF SRTIO3 THIN-FILMS

被引:18
作者
MATSUI, K
TAGA, M
KOBAYASHI, T
机构
[1] Department of Electrical Engineering, Osaka University, Toyonaka, Osaka, 560
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 6A期
关键词
FIELD EFFECT TRANSISTOR (FET); SRTIO3; FOURIER TRANSFORM INFRARED (FTIR); DIELECTRIC CONSTANT;
D O I
10.1143/JJAP.32.L796
中图分类号
O59 [应用物理学];
学科分类号
摘要
SrTiO3 (STO) thin films were grown on (111)Pt/(100)MgO substrates at several deposition temperatures T(D) (350-710-degrees-C) and characterized. Deposition temperatures T(D) greater-than-or-equal-to 540-degrees-C yielded epitaxial (100)STO films but they strongly affected both the optical and dielectric properties of films. The LO (longitudinal optical phonon) absorption spectra and partial derivative epsilon/partial derivative T (temperature coefficient of the dielectric constant) showed similar dependence on T(D), and optimization was achieved at T(D) = 665-degrees-C. However, the highest value of the room temperature epsilon( = 313epsilon0, where epsilon0 is the vacuum dielectric costant) was obtained from the film grown at T(D) = 540-degrees-C.
引用
收藏
页码:L796 / L798
页数:3
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