OPTICAL STUDIES OF ANODIC OXIDE ON GAAS

[51] ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 802 - 804

[52] WEAST RC, 1976, CRC HDB CHEM PHYSICS

[53] WEISS B, 1977, GALLIUM ARSENIDE REL, P168

[54] OXIDE LAYERS ON 3-5 COMPOUND SEMICONDUCTORS [J]. THIN SOLID FILMS, 1976, 39 (DEC) : 105 - 117

[55] Wyckoff R.W.G., 1964, CRYSTAL STRUCTURES, V2

[56] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211

[57] ELECTRICAL-PROPERTIES OF ANODIC AND PYROLYTIC DIELECTRICS ON GALLIUM-ARSENIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 957 - 960

[58] [No title captured]

[59] [No title captured]

[60] [No title captured]

[51] ANALYSIS OF ANODIC OXIDE-FILMS ON GAAS AND GAP BY MEANS OF RADIOACTIVE-TRACER TECHNIQUES [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (05) : 802 - 804

[52] WEAST RC, 1976, CRC HDB CHEM PHYSICS

[53] WEISS B, 1977, GALLIUM ARSENIDE REL, P168

[54] OXIDE LAYERS ON 3-5 COMPOUND SEMICONDUCTORS [J]. THIN SOLID FILMS, 1976, 39 (DEC) : 105 - 117

[55] Wyckoff R.W.G., 1964, CRYSTAL STRUCTURES, V2

[56] ELLIPSOMETRIC INVESTIGATIONS OF OXIDE FILMS ON GAAS [J]. JOURNAL DE PHYSIQUE, 1964, 25 (1-2): : 208 - 211

[57] ELECTRICAL-PROPERTIES OF ANODIC AND PYROLYTIC DIELECTRICS ON GALLIUM-ARSENIDE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 957 - 960

[58] [No title captured]

[59] [No title captured]

[60] [No title captured]