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NUMERICAL-ANALYSIS OF GAAS-MESFETS WITH P-BUFFER LAYER ON SEMI-INSULATING SUBSTRATE INCLUDING DEEP TRAPS

被引：2
作者：
HORIO, K
YANAI, H
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 02期
关键词：
D O I：
10.1049/el:19890064
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：86 / 88
页数：3
相关论文
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