NEW PSEUDOMORPHIC N-/N+ GAAS/INGAAS/GAAS POWER HEMT WITH HIGH BREAKDOWN VOLTAGES

被引：4

作者：

SONODA, T

SAKAMOTO, S

KASAI, N

TSUJI, S

YAMANOUCHI, M

TAKAMIYA, S

KASHIMOTO, Y

机构：

[1] Kitaitami Works, Mitsubishi Electric Corp., 4-1, Mizuhara, Itami

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 14期

关键词：

TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19910815

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new pseudomorphic N-/N+ GaAs/InGaAs/GaAs power HEMT is described that has high breakdown voltage V(B) of more than 20 V and full channel current I(f) of 460 mA/mm which allows the simultaneous improvement of maximum power handling capability, linear gain GL and power-added efficiency N(add) over GaAs FETs with the same product of doping concentration and thickness of the doped layer under the gate. The 10.5 mm wide device delivered a record maximum output power of 4.7 W from a single HEMT chip with GL of 8 dB and N(add) of 25% at 14.25 GHz.

引用

页码：1303 / 1305

页数：3

共 6 条

[1] ANALYSIS OF CHARGE CONTROL IN PSEUDOMORPHIC TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTORS [J].