OPTICALLY DETECTED IMPACT-IONIZATION-RELATED CHAOTIC OSCILLATIONS IN GA0.47IN0.53AS

被引：6

作者：

GODLEWSKI, M

FRONC, K

GAJEWSKA, M

CHEN, WM

MONEMAR, B

机构：

[1] INST ELECTR MAT TECHNOL,PL-02668 WARSAW,POLAND

[2] LINKOPING UNIV,DEPT PHYS & MEASUREMENT TECHNOL,S-58183 LINKOPING,SWEDEN

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.44.8357

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Studies of impact-ionization-induced chaotic oscillations of photoluminescence (PL) intensity by the optically detected cyclotron resonance method are reported in Ga0.47In0.53As layers grown by liquid-phase epitaxy on semi-insulating InP:Fe. It is directly shown that the impact ionization from shallow impurities is responsible for the chaotic oscillations of the PL intensity and the corresponding oscillations in the density and energy of free electrons.

引用

页码：8357 / 8360

页数：4

共 16 条

[1]

ASHKINADZE BM, 1987, JETP LETT+, V46, P357

[2]

BAGRAEV NT, 1984, SOV PHYS SEMICOND+, V18, P49

[3]

BARANOV PG, 1977, JETP LETT+, V26, P249

[4] GROWTH AND PHOTO-LUMINESCENCE SPECTRA OF HIGH-PURITY LIQUID-PHASE EPITAXIAL IN0.53GA0.47AS [J].