FERROELECTRIC BISMUTH TITANATE FILMS BY HOT-WALL METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：25

作者：

SI, J ^{[1
]}

DESU, SB ^{[1
]}

机构：

[1] VIRGINIA POLYTECH INST & STATE UNIV,DEPT MAT SCI ENGN,BLACKSBURG,VA 24061

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.353943

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ferroelectric bismuth titanate thin films were successfully deposited on Si, sapphire disks, and Pt/Ti/SiO2/Si substrates by hot wall metalorganic chemical vapor deposition. Triphenyl bismuth [Bi(C6H5)3] and titanium ethoxide [Ti(C2H5O)4] were used as the precursors. The deposition rates were in the range of 3.9-12.5 nm/min. The Bi/Ti ratio was easily controlled by precursor temperature, carrier gas flow rate, and deposition temperature. As-deposited films were pure Bi4Ti3O12 phase. The films were specular and showed uniform and fine grain size. Optical constants as a function of wavelength, were calculated from the film transmission characteristics in the ultraviolet-visible-near infrared (UV-VIS-NIR) region. The 550-degrees-C annealed film showed a spontaneous polarization of 26.5 muC/cm2 and a coercive field of 244.3 kV/cm.

引用

页码：7910 / 7913

页数：4

共 8 条

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[4]

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