REACTIVE ION ETCHING OF GALLIUM NITRIDE USING HYDROGEN BROMIDE PLASMAS

被引：56

作者：

PING, AT ^{[1
]}

ADESIDA, I ^{[1
]}

KHAN, MA ^{[1
]}

KUZNIA, JN ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 22期

关键词：

REACTIVE ION ETCHING; GALLIUM NITRIDE;

D O I：

10.1049/el:19941247

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of the reactive ion etching (RIE) of gallium nitride (GaN) have been investigated using HBr, 1:1 HBr:Ar, and 1:1 HBr:H-2 plasmas. Etch rates were found to increase with plasma self-bias voltage for all gas mixtures exceeding 60nm/min at -400 V for pure HBr. Higher etch rates were obtained for pure HBr than for HBr mixtures with Ar and H-2. Chamber pressure was also found to slightly affect etch rates for the pressure ranges investigated. The anisotropy of etched profiles was found to improve with increasing pressure. Smooth etched surfaces are also demonstrated.

引用

页码：1895 / 1897

页数：3

共 8 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS
ADESIDA, I
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