SOME ELECTRICAL PROPERTIES OF SILICON-SILICON DIOXIDE SYSTEM

被引：22

作者：

LAMB, DR

机构：

来源：

THIN SOLID FILMS | 1970年 / 5卷 / 04期

关键词：

D O I：

10.1016/0040-6090(70)90096-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：247 / &

共 70 条

[31] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (09) :985-&

[32] A MODEL FOR RADIATION DAMAGE IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

SNOW, EH .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1966, 54 (06) :894-+

[33]

HEIMAN FP, 1965, T IEEE, VED12, P167

[34]

HIPPEL AV, 1953, PHYS REV, V91, P568

[35]

KAHNG D, 1967, BELL TECH SYST J JUL, P1288

[36]

KALTER H, 1969, MAR SEM DEV RES M MU

[37] STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5 [J].

KERR, DR ;

LOGAN, JS ;

BURKHARDT, PJ ;

PLISKIN, WA .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1964, 8 (04) :376-&

[38]

KOOI E, 1966, PHILIPS RES REP, V21, P477

[39] EFFECT OF AMBIENT TEMPERATURE AND COOLING RATE ON SURFACE CHARGE AT SILICON/SILICON DIOXIDE INTERFACE [J].

LAMB, DR ;

BADCOCK, FR .

INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 24 (01) :11-&

[40]

LAMB DR, 1968, INT J ELECTRON, V5, P481

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