ZERO-DIMENSIONAL STATES IN SUBMICRON DOUBLE-BARRIER HETEROSTRUCTURES LATERALLY CONSTRICTED BY HYDROGEN PLASMA ISOLATION

被引：13

作者：

VANHOVE, M

PEREIRA, R

DERAEDT, W

BORGHS, G

JONCKHEERE, R

SALA, C

MAGNUS, W

SCHOENMAKER, W

VANROSSUM, M

机构：

[1] Interuniversity Microelectronics Center, B-3001 Leuven

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 72卷 / 01期

关键词：

D O I：

10.1063/1.352151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lateral dimensions of resonant tunneling AlGaAs-GaAs double barrier heterostructures have been restricted by hydrogen plasma exposure. Ohmic contacts to the submicron diodes have been made by solid phase epitaxial growth of Ge on GaAs. The current-voltage characteristics show a fine structure splitting that is inversely proportional to the lateral size of the diode. The results are interpreted as resonant tunneling through zero-dimensional states in the quantum box confined by the AlGaAs barriers and a harmonic lateral confining potential.

引用

页码：158 / 160

页数：3

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