STATIC FREQUENCY-DIVIDERS FOR HIGH OPERATING SPEED (25 GHZ, 170MW) AND LOW-POWER CONSUMPTION (16 GHZ, 8MW) IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY

被引：8

作者：

FELDER, A ^{[1
]}

STENGL, R ^{[1
]}

HAUENSCHILD, J ^{[1
]}

REIN, HM ^{[1
]}

MEISTER, TF ^{[1
]}

机构：

[1] RUHR UNIV BOCHUM,ARBEITSGRP HALBLEITERBAUELEMENTE,W-4630 BOCHUM,GERMANY

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 12期

关键词：

INTEGRATED CIRCUITS; FREQUENCY DIVIDERS;

D O I：

10.1049/el:19930716

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Static frequency dividers have been fabricated in a selective epitaxial bipolar technology using 0.8 mum lithography. The measured maximum frequency of 25 GHz is the highest value reported for static silicon dividers. Moreover, a 16 GHz low-power version is presented which consumes only 8 mW in the first stage.

引用

页码：1072 / 1074

页数：3

共 6 条

[1] 25 GBIT/S DECISION CIRCUIT, 34 GBIT/S MULTIPLEXER, AND 40 GBIT/S DEMULTIPLEXER IC IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY [J].

FELDER, A ;

STENGL, R ;

HAUENSCHILD, J ;

REIN, HM ;

MEISTER, TF .

ELECTRONICS LETTERS, 1993, 29 (06) :525-527

[2]

FELDER A, 1993, FEB IEEE ISSCC 93, P156

[3]

FELDER A, 1992, OCT P BIP CIRC TECHN, P159

[4] 39.5-GHZ STATIC FREQUENCY-DIVIDER IMPLEMENTED IN ALINAS/GAINAS HBT TECHNOLOGY [J].

HAFIZI, M ;

JENSEN, JF ;

METZGER, RA ;

STANCHINA, WE ;

RENSCH, DB ;

ALLEN, YK .

IEEE ELECTRON DEVICE LETTERS, 1992, 13 (12) :612-614

[5] A SI BIPOLAR 21-GHZ 320-MW STATIC FREQUENCY-DIVIDER [J].

KURISU, M ;

OHUCHI, M ;

SAWAIRI, A ;

SUGIYAMA, M ;

TAKEMURA, H ;

TASHIRO, T .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (11) :1626-1631

[6]

MEISTER TF, 1992, P IEDM 92 SAN FRANC, P401

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