25 GBIT/S DECISION CIRCUIT, 34 GBIT/S MULTIPLEXER, AND 40 GBIT/S DEMULTIPLEXER IC IN SELECTIVE EPITAXIAL SI BIPOLAR TECHNOLOGY

被引:10
作者
FELDER, A [1 ]
STENGL, R [1 ]
HAUENSCHILD, J [1 ]
REIN, HM [1 ]
MEISTER, TF [1 ]
机构
[1] RUHR UNIV BOCHUM,AG HALBLEITERBAUELEMENTE,W-4630 BOCHUM,GERMANY
关键词
INTEGRATED CIRCUITS; HIGH-SPEED BIPOLAR DEVICES;
D O I
10.1049/el:19930351
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 25 Gbit/s decision circuit, a 34 Gbit/s multiplexer, and a 40 Gbit/s demultiplexer IC have been realised with selective epitaxial silicon bipolar technology using 0-8 mum lithography. The data rates achieved are the highest values reported for these types of circuit in any IC technology.
引用
收藏
页码:525 / 527
页数:3
相关论文
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