LOW-TEMPERATURE SYNTHESIS OF GE NANOCRYSTALS IN SIO2

被引：35

作者：

CRACIUN, V ^{[1
]}

BOYD, IW ^{[1
]}

READER, AH ^{[1
]}

VANDENHOUDT, DEW ^{[1
]}

机构：

[1] PHILIPS RES LABS,5656 AA EINDHOVEN,NETHERLANDS

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 25期

关键词：

D O I：

10.1063/1.112422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel and simple technique for the synthesis of Ge nanocrystals embedded in SiO2 is reported. The method is fully compatible with silicon microelectronic technology and relies solely upon low temperature (only 550°C) ultraviolet oxidation of Si0.8Ge0.2 strained layers. This temperature is significantly lower than that usually used for the formation of Ge nanocrystals from SiGe oxides by H2 reduction. © 1994 American Institute of Physics.

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页码：3233 / 3235

页数：3

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