UV-ASSISTED OXIDATION OF SIGE STRAINED LAYERS

被引：8

作者：

CRACIUN, V ^{[1
]}

READER, AH ^{[1
]}

KERSTEN, W ^{[1
]}

TIMMERS, J ^{[1
]}

GRAVESTEIJN, DJ ^{[1
]}

BOYD, IW ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

THIN SOLID FILMS | 1992年 / 222卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(92)90056-H

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Low-temperature dry oxidation of Si-capped and uncapped MBE-grown Si0.8Ge0.2, assisted by the UV radiation from a low-pressure Hg grid lamp, has been studied. For short processing times, the oxidation rate of Si0.8Ge0.2 was found to be a factor of 2-3 higher than that induced by the same method for elemental monocrystalline Si. After more than 80% of the initial thickness of the Si0.8Ge0.2 was oxidized, the growth rate of the oxide film approached that found for Si. The photo-oxidation rate of the Si capped layer was identical with that of single-crystal silicon. Because of the low temperature (550-degrees-C) employed for this UV-assisted oxidation, no measurable relaxation of the strained layers was detected.

引用

页码：145 / 149

页数：5

共 19 条

[1] EVALUATED KINETIC AND PHOTOCHEMICAL DATA FOR ATMOSPHERIC CHEMISTRY [J].