UV ASSISTED GROWTH OF 100A THICK SIO2 AT 550-DEGREES-C

被引：12

作者：

KAZOR, A

BOYD, IW

机构：

[1] Department of Electronics and Electrical Engineering, University College, London, London Torrington Place

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; METAL OXIDE SEMICONDUCTOR STRUCTURES AND DEVICES;

D O I：

10.1049/el:19910570

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin SiO2 films have been grown by UV irradiation at much higher growth rates (more than 50 times) than those achieved during conventional thermal oxidation.

引用

页码：909 / 911

页数：3

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