ATMOSPHERIC-PRESSURE, LOW-TEMPERATURE (LESS-THAN-500-DEGREES-C) UV/OZONE OXIDATION OF SILICON

被引：10

作者：

NAYAR, V

PATEL, P

BOYD, IW

机构：

[1] Department of Electronic and Electrical Engineering, University College London, London WCIE 7JE, Torrington Place

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 03期

关键词：

Semiconductor devices and materials;

D O I：

10.1049/el:19900138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report here a new and simple growth technology which is capable of producing ultra-thin oxides (≈40 Å) on silicon at temperatures below 500°C. Preliminary growth and electrical measurements are discussed. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：205 / 206

页数：2

共 9 条

[1] LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON IN N2O BY UV-IRRADIATION
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[7] LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON
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[8] XPS STUDY OF THE OXIDATION PROCESS OF SI(111) VIA PHOTOCHEMICAL DECOMPOSITION OF N2O BY AN UV EXCIMER LASER
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[J]. SURFACE SCIENCE, 1988, 193 (03) : 321 - 335
[9] KINETICS OF THE SILICON DIOXIDE GROWTH-PROCESS IN AFTERGLOWS OF MICROWAVE-INDUCED PLASMAS
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HEYNS, M
DEJAEGERE, S
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (04) : 1450 - 1458

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