LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON IN N2O BY UV-IRRADIATION

[1] ATOMIC OXYGEN AND THE THERMAL-OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1264 - 1265

[2] Kawasaki M., 1984, Oyo Buturi, V53

[3] KERN W, 1970, RCA REV, V31, P187

[4] A-SI1-XOX-H FILMS PREPARED BY DIRECT PHOTO-CVD USING CO2 GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L1999 - L2002

[5] Sarkozy R. F., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P68

[6] LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L733 - L735

[7] NORMAL-PRESSURE AND LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (11): : 1907 - 1911

[1] ATOMIC OXYGEN AND THE THERMAL-OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1264 - 1265

[2] Kawasaki M., 1984, Oyo Buturi, V53

[3] KERN W, 1970, RCA REV, V31, P187

[4] A-SI1-XOX-H FILMS PREPARED BY DIRECT PHOTO-CVD USING CO2 GAS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (11): : L1999 - L2002

[5] Sarkozy R. F., 1981, 1981 Symposium on VLSI Technology. Digest of Technical Papers, P68

[6] LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (09): : L733 - L735

[7] NORMAL-PRESSURE AND LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (11): : 1907 - 1911