ATOMIC OXYGEN AND THE THERMAL-OXIDATION OF SILICON

[1] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[2] APPLICATION OF ELECTRON-PARAMAGNETIC-RES SPECTROSCOPY TO OXIDATIVE REMOVAL OF ORGANIC MATERIALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2459 - 2464

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMODYNAMICS STUDIES OF HIGH TEMPERATURE EQUILIBRIA .3. SOLGAS, A COMPUTER PROGRAM FOR CALCULATING COMPOSITION AND HEAT CONDITION OF AN EQUILIBRIUM MIXTURE [J]. ACTA CHEMICA SCANDINAVICA, 1971, 25 (07): : 2651 - &

[5] KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1100 - +

[6] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[7] EVIDENCE FOR A PARALLEL PATH OXIDATION MECHANISM AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 74 - 75

[8] Kern W., 1984, Semiconductor International, V7, P94

[9] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2693 - 2700

[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2685 - 2693

[1] REVISED MODEL FOR OXIDATION OF SI BY OXYGEN [J]. APPLIED PHYSICS LETTERS, 1978, 33 (05) : 424 - 426

[2] APPLICATION OF ELECTRON-PARAMAGNETIC-RES SPECTROSCOPY TO OXIDATIVE REMOVAL OF ORGANIC MATERIALS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (12) : 2459 - 2464

[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &

[4] THERMODYNAMICS STUDIES OF HIGH TEMPERATURE EQUILIBRIA .3. SOLGAS, A COMPUTER PROGRAM FOR CALCULATING COMPOSITION AND HEAT CONDITION OF AN EQUILIBRIUM MIXTURE [J]. ACTA CHEMICA SCANDINAVICA, 1971, 25 (07): : 2651 - &

[5] KINETICS OF THERMAL GROWTH OF ULTRA-THIN LAYERS OF SIO2 ON SILICON .2. THEORY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) : 1100 - +

[6] SILICON OXIDATION STUDIES - SOME ASPECTS OF INITIAL OXIDATION REGIME [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (10) : 1708 - 1714

[7] EVIDENCE FOR A PARALLEL PATH OXIDATION MECHANISM AT THE SI-SIO2 INTERFACE [J]. APPLIED PHYSICS LETTERS, 1982, 40 (01) : 74 - 75

[8] Kern W., 1984, Semiconductor International, V7, P94

[9] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN - GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .2. PHYSICAL-MECHANISMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2693 - 2700

[10] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2685 - 2693