A-SI1-XOX-H FILMS PREPARED BY DIRECT PHOTO-CVD USING CO2 GAS

被引：27

作者：

OTSUBO, S

SAITO, M

MORIMOTO, A

KUMEDA, M

SHIMIZU, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 11期

关键词：

D O I：

10.1143/JJAP.27.L1999

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1999 / L2002

页数：4

共 9 条

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[8] LOW-TEMPERATURE GROWTH OF SILICON DIOXIDE FILM BY PHOTO-CHEMICAL VAPOR-DEPOSITION [J].

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[9] X-RAY-FLUORESCENCE ANALYSIS OF HG IN SIO2-FILMS DEPOSITED BY HG-SENSITIZED PHOTO-CVD [J].

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