STRUCTURE AND DEFECTS IN AMORPHOUS SI-O FILMS

被引：37

作者：

MORIMOTO, A

NORIYAMA, H

SHIMIZU, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 01期

关键词：

D O I：

10.1143/JJAP.26.22

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：22 / 27

页数：6

共 18 条

[1] A STUDY OF ELECTRONIC STATES IN A-SIOX AND A-SINX THIN-FILMS BY INFRARED, AUGER-ELECTRON AND X-RAY PHOTOELECTRON SPECTROSCOPIES [J].

CHAO, SS ;

LUCOVSKY, G ;

LIN, SY ;

WONG, CK ;

RICHARD, PD ;

TSU, DV ;

TAKAGI, Y ;

KEEM, JE ;

TYLER, JE ;

PAI, P .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :929-932

[2] OBSERVATION AND ANALYSIS OF PRIMARY SI-29 HYPERFINE-STRUCTURE OF E' CENTER IN NON-CRYSTALLINE SIO2 [J].

GRISCOM, DL ;

FRIEBELE, EJ ;

SIGEL, GH .

SOLID STATE COMMUNICATIONS, 1974, 15 (03) :479-483

[3] WIDE OPTICAL-GAP A-SI-O-H FILMS PREPARED FROM SIH4-CO2 GAS-MIXTURE [J].

HAGA, K ;

YAMAMOTO, K ;

KUMANO, M ;

WATANABE, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01) :L39-L41

[4] CHEMICAL-BOND AND RELATED PROPERTIES OF SIO2 .7. STRUCTURE AND ELECTRONIC PROPERTIES OF THE SIOX REGION OF SI-SIO2 INTERFACES [J].

HUBNER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :665-673

[5] A MODEL OF SIPOS DEPOSITION BASED ON INFRARED SPECTROSCOPIC ANALYSIS [J].

KNOLLE, WR ;

MAXWELL, HR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2254-2259

[6] CHEMICAL EFFECTS ON THE FREQUENCIES OF SI-H VIBRATIONS IN AMORPHOUS SOLIDS [J].

LUCOVSKY, G .

SOLID STATE COMMUNICATIONS, 1979, 29 (08) :571-576

[7] NITROGEN-BONDING ENVIRONMENTS IN GLOW-DISCHARGE DEPOSITED ALPHA-SI-H FILMS [J].

LUCOVSKY, G ;

YANG, J ;

CHAO, SS ;

TYLER, JE ;

CZUBATYJ, W .

PHYSICAL REVIEW B, 1983, 28 (06) :3234-3240

[8] PHOTOCONDUCTIVE AMORPHOUS SILICON-CARBIDE PRODUCED BY INTERMEDIATE SPECIES SIF2 AND CF4 MIXTURE [J].

MATSUMURA, H ;

UESUGI, T ;

IHARA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01) :L24-L26

[9] TEMPERATURE-INDEPENDENT PHOTO-LUMINESCENCE IN AMORPHOUS SI1-XCX-(F,H) FILMS WITH LOW DEFECT DENSITY [J].

MORIMOTO, A ;

MIURA, T ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (06) :908-911

[10] PROPERTIES OF HYDROGENATED AMORPHOUS SI-N PREPARED BY VARIOUS METHODS [J].

MORIMOTO, A ;

TSUJIMURA, Y ;

KUMEDA, M ;

SHIMIZU, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (11) :1394-1398

← 1 2 →