LOW-TEMPERATURE THERMAL-OXIDATION OF AMORPHOUS-SILICON AND ITS APPLICATION TO AMORPHOUS-SILICON MOS-TRANSISTORS

被引：10

作者：

UCHIDA, Y

IKEGAMI, T

MATSUMURA, M

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 09期

关键词：

D O I：

10.1143/JJAP.24.L733

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L733 / L735

页数：3

共 6 条

[1] ISHIBASHI K, 1982, APPL PHYS LETT, V45, P454
[2] APPLICATIONS OF A-SI FIELD-EFFECT TRANSISTORS IN LIQUID-CRYSTAL DISPLAYS AND IN INTEGRATED-LOGIC CIRCUITS
LECOMBER, PG
SNELL, AJ
MACKENZIE, KD
SPEAR, WE
[J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 423 - 432
[3] AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION
LECOMBER, PG
SPEAR, WE
GHAITH, A
[J]. ELECTRONICS LETTERS, 1979, 15 (06) : 179 - 181
[4] AMORPHOUS-SILICON INTEGRATED-CIRCUIT
MATSUMURA, M
HAYAMA, H
[J]. PROCEEDINGS OF THE IEEE, 1980, 68 (10) : 1349 - 1350
[5] A NEW THERMAL-OXIDATION METHOD FOR SEMICONDUCTORS-III-V
TAKAGI, Y
SUGIURA, O
NARUKE, Y
TAKAHASHI, T
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (07): : L490 - L492
[6] YAMAMOTO Y, 1983, ELECTRON LETT, V42, P607