A NEW THERMAL-OXIDATION METHOD FOR SEMICONDUCTORS-III-V

[1] COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 5 - 12

[2] FIJISADA H, 1984, JPN J APPL PHYS, V23, pL46

[3] FUJIYASU H, 1977, JPN J APPL PHYS, V16, P1473

[4] HASEGAWA H, 1981, OYO BUTURI, V12, P1289

[5] ESCA STUDIES OF CHEMICAL-SHIFTS FOR METAL-OXIDES [J]. APPLIED PHYSICS, 1976, 9 (03): : 217 - 222

[6] KANAZAWA K, 1981, JPN J APPL PHYS, V20, P1107

[7] COMPOSITION AND STRUCTURE OF THERMAL OXIDES OF INDIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4134 - 4140

[8] Ohno I., 1979, Oyo Buturi, V48, P924

[9] ANALYSIS OF NATIVE OXIDE-FILMS AND OXIDE SUBSTRATE REACTIONS ON III-V-SEMICONDUCTORS USING THERMOCHEMICAL PHASE-DIAGRAMS [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 3 - 16

[10] PHASE-COMPOSITION OF THIN OXIDE-FILMS ON INSB [J]. THIN SOLID FILMS, 1981, 76 (01) : 11 - 21

[1] COMPARISON OF GAAS DEVICE APPROACHES FOR ULTRAHIGH-SPEED VLSI [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 5 - 12

[2] FIJISADA H, 1984, JPN J APPL PHYS, V23, pL46

[3] FUJIYASU H, 1977, JPN J APPL PHYS, V16, P1473

[4] HASEGAWA H, 1981, OYO BUTURI, V12, P1289

[5] ESCA STUDIES OF CHEMICAL-SHIFTS FOR METAL-OXIDES [J]. APPLIED PHYSICS, 1976, 9 (03): : 217 - 222

[6] KANAZAWA K, 1981, JPN J APPL PHYS, V20, P1107

[7] COMPOSITION AND STRUCTURE OF THERMAL OXIDES OF INDIUM-PHOSPHIDE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 4134 - 4140

[8] Ohno I., 1979, Oyo Buturi, V48, P924

[9] ANALYSIS OF NATIVE OXIDE-FILMS AND OXIDE SUBSTRATE REACTIONS ON III-V-SEMICONDUCTORS USING THERMOCHEMICAL PHASE-DIAGRAMS [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 3 - 16

[10] PHASE-COMPOSITION OF THIN OXIDE-FILMS ON INSB [J]. THIN SOLID FILMS, 1981, 76 (01) : 11 - 21