共 11 条
- [1] MATRIX ATOMIC LOSSES AND OXYGEN INCORPORATION UNDER RUBY-LASER IRRADIATION OF SILICON IN GASEOUS ATMOSPHERES [J]. PHYSICAL REVIEW B, 1986, 34 (04): : 2346 - 2359
- [2] BOYD IW, 1987, LASER PROCESSING THI
- [3] ANALYSIS OF THE THERMAL CONTRIBUTION TO UV LASER-INDUCED OXIDATION OF SILICON AND SILICON MONOXIDE [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 253 - 260
- [4] MELTING THRESHOLD OF CRYSTALLINE AND AMORPHIZED SI IRRADIATED WITH A PULSED ARF (193 NM) EXCIMER LASER [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1988, 45 (04): : 361 - 364
- [5] GOODALL FN, 1988, FEB P SHORT M SER
- [6] ATOMIC OXYGEN AND THE THERMAL-OXIDATION OF SILICON [J]. APPLIED PHYSICS LETTERS, 1988, 52 (15) : 1264 - 1265
- [7] NEW RESULTS ON LOW-TEMPERATURE THERMAL-OXIDATION OF SILICON [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1987, 55 (02): : 131 - 145
- [9] SCHAFER SA, 1982, J VAC SCI TECHNOL, V21, P423
- [10] THIN THERMAL OXIDE ON SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (10) : 2460 - 2461