HEAT-FLOW CALCULATION OF PULSED EXCIMER ULTRAVIOLET-LASERS MELTING OF AMORPHOUS AND CRYSTALLINE SILICON SURFACES

[1] Baeri P., 1982, Laser annealing of semiconductors, P75

[2] BAUKSBAUM PH, 1984, PHYS REV LETT, V53, P182

[3] BELL AE, 1979, RCA REV, V40, P295

[4] HIGH-EFFICIENCY KRF EXCIMER LASER [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 23 - 24

[5] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[6] THERMAL-CONDUCTIVITY OF AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : K31 - K33

[7] GRAY DE, 1972, AM I PHYSICS HDB, pP6

[8] Jellison G. E. Jr., 1985, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium, P113

[9] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976

[10] PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONS [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (07) : 561 - 564

[1] Baeri P., 1982, Laser annealing of semiconductors, P75

[2] BAUKSBAUM PH, 1984, PHYS REV LETT, V53, P182

[3] BELL AE, 1979, RCA REV, V40, P295

[4] HIGH-EFFICIENCY KRF EXCIMER LASER [J]. APPLIED PHYSICS LETTERS, 1976, 28 (01) : 23 - 24

[5] HEAT OF CRYSTALLIZATION AND MELTING-POINT OF AMORPHOUS-SILICON [J]. APPLIED PHYSICS LETTERS, 1983, 42 (08) : 698 - 700

[6] THERMAL-CONDUCTIVITY OF AMORPHOUS-SILICON [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 76 (01): : K31 - K33

[7] GRAY DE, 1972, AM I PHYSICS HDB, pP6

[8] Jellison G. E. Jr., 1985, Energy Beam-Solid Interactions and Transient Thermal Processing/1984 Symposium, P113

[9] TEMPERATURE-DEPENDENCE OF THE REFLECTANCE OF SOLID AND LIQUID SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) : 4975 - 4976

[10] PULSED-LASER MELTING OF AMORPHOUS-SILICON - TIME-RESOLVED MEASUREMENTS AND MODEL-CALCULATIONS [J]. PHYSICAL REVIEW LETTERS, 1984, 52 (07) : 561 - 564