LOW-TEMPERATURE PHOTO-ASSISTED OXIDATION OF SILICON

被引：25

作者：

KAZOR, A

BOYD, IW

机构：

[1] Department of Electronics and Electrical Engineering, University College London, London, WC1E 7JE, Torrington Place

来源：

APPLIED SURFACE SCIENCE | 1992年 / 54卷

关键词：

D O I：

10.1016/0169-4332(92)90087-E

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Future VLSI submicron devices will have gate oxides less than 100 angstrom thick. However, conventional high temperature (850-1000-degrees-C) growth of thin oxides will be impossible since it causes dopant diffusion and wafer warpage. We have used a photo-assisted technique to grow up to 100 angstrom of SiO2 at 550-degrees-C in 240 min. As the conventional growth mechanisms cannot fully explain the growth curves obtained, we suggest a new approach to explain the mechanisms involved in photo-oxidation.

引用

页码：460 / 464

页数：5

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