PLASMA CHEMICAL ASPECTS OF MAGNETRON ION ETCHING WITH CF4/O-2

[1] BOBBIO SM, 1985, EL SOC EXT ABSTR, V852, P421

[2] HIGH-RATE MASKED ETCHING OF GAAS BY MAGNETRON ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03): : 706 - 713

[3] DEBAENE F, 1985, EL SOC EXT ABSTR, V852, P419

[4] HIROBE K, 1985, J ELECTROCHEM SOC, V132, P1638

[5] HIGH-RATE REACTIVE ION ETCHING OF SIO2 USING A MAGNETRON DISCHARGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L817 - L820

[6] Kay E., 1984, Methods and Materials in Microelectronic Technology. Proceedings of the International Symposium, P243

[7] LIN I, 1985, J APPL PHYS, V58, P2981, DOI 10.1063/1.335847

[8] LIN I, 1983, EL SOC EXT ABSTR, V831, P132

[9] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[10] STUDY OF NEAR-SURFACE DISORDER AND SURFACE RESIDUES AFTER REACTIVE ION ETCHING OF SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 275 - 281

[1] BOBBIO SM, 1985, EL SOC EXT ABSTR, V852, P421

[2] HIGH-RATE MASKED ETCHING OF GAAS BY MAGNETRON ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (03): : 706 - 713

[3] DEBAENE F, 1985, EL SOC EXT ABSTR, V852, P419

[4] HIROBE K, 1985, J ELECTROCHEM SOC, V132, P1638

[5] HIGH-RATE REACTIVE ION ETCHING OF SIO2 USING A MAGNETRON DISCHARGE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) : L817 - L820

[6] Kay E., 1984, Methods and Materials in Microelectronic Technology. Proceedings of the International Symposium, P243

[7] LIN I, 1985, J APPL PHYS, V58, P2981, DOI 10.1063/1.335847

[8] LIN I, 1983, EL SOC EXT ABSTR, V831, P132

[9] PLASMA ETCHING OF SI AND SIO2 - EFFECT OF OXYGEN ADDITIONS TO CF4 PLASMAS [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3796 - 3803

[10] STUDY OF NEAR-SURFACE DISORDER AND SURFACE RESIDUES AFTER REACTIVE ION ETCHING OF SILICON [J]. SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) : 275 - 281