FILM-LEVEL HYBRID INTEGRATION OF ALGAAS LASER DIODE WITH GLASS WAVE-GUIDE ON SI SUBSTRATE

A ridge-waveguide AlGaAs laser diode (LD) was integrated with a SiO2-Ta2O5 embedded waveguide on a Si substrate by using a film-level hybrid integration technique of semiconductor epitaxial film. CW operation of the LD was achieved at room temperature. The LD-waveguide butt-coupling loss was 9 dB, and the loss due to misalignment was estimated at 3 dB which corresponds to a displacement of about 1-mu-m in both the vertical and lateral directions.