FABRICATION OF A GAAS-ALGAAS GRIN-SCH SQW LASER DIODE ON SILICON BY EPITAXIAL LIFT-OFF

被引：32

作者：

POLLENTIER, I

BUYDENS, L

VANDAELE, P

DEMEESTER, P

机构：

[1] Laboratory of Electromagnetism and Acoustics, University of Gent-IMEC, B-9000, Gent

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 02期

关键词：

D O I：

10.1109/68.76859

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Epitaxial lift-off (ELO) is becoming an attractive means for the optoelectronic integration of III-V semiconductors with Si for applications such as optical communication and optical printing. This paper describes the epitaxial lift-off of a GaAs-AIGaAs graded-index separate-confinement heterostructure (GRIN-SCH) single-quantum-well (SQW) laser diode and the subsequent transfer to a Si substrate. It is the first time that a layer structure containing AI0.60Ga0.40As has been lifted off, and that the 5 mu-m thin film was cleaved after ELO by a novel wedge-cleaving process. These results hold interesting prospects towards the ability to integrate III-V short-cavity lasers on arbitrary substrates.

引用

页码：115 / 117

页数：3

共 9 条

[1] CRACK FORMATION AND THERMAL-STRESS RELAXATION OF GAAS ON SI GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY
ACKAERT, A
BUYDENS, L
LOOTENS, D
VANDAELE, P
DEMEESTER, P
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (21) : 2187 - 2189
[2] MONOLITHIC INTEGRATION OF GAAS/ALGAAS LED AND SI DRIVER CIRCUIT
CHOI, HK
MATTIA, JP
TURNER, GW
TSAUR, BY
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 512 - 514
[3] GRIN-SCH SQW LASER PHOTODIODE ARRAY BY IMPROVED MICROCLEAVED FACET PROCESS
NOBUHARA, H
WADA, O
FUJII, T
[J]. ELECTRONICS LETTERS, 1985, 21 (17) : 718 - 719
[4] EPITAXIAL LIFT-OFF GAAS LEDS TO SI FOR FABRICATION OF OPTO-ELECTRONIC INTEGRATED-CIRCUITS
POLLENTIER, I
DEMEESTER, P
ACKAERT, A
BUYDENS, L
VANDAELE, P
BAETS, R
[J]. ELECTRONICS LETTERS, 1990, 26 (03) : 193 - 194
[5] POLLENTIER I, 1990, ELECTRON LETT, V26, P925
[6] GAAS SINGLE-QUANTUM WELL GRIN-SCH RIDGE LASERS GROWN ON INP BY MOVPE
VANACKERE, M
ACKAERT, A
MOERMAN, I
LOOTENS, D
DEMEESTER, P
VANDAELE, P
BAETS, R
LAGASSE, P
[J]. ELECTRONICS LETTERS, 1989, 25 (01) : 47 - 48
[7] AN ALGAAS/GAAS SHORT-CAVITY LASER AND ITS MONOLITHIC INTEGRATION USING MICROCLEAVED FACETS (MCF) PROCESS
WADA, O
YAMAKOSHI, S
SAKURAI, T
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (02) : 126 - 130
[8] Yablonovitch E., 1989, IEEE Photonics Technology Letters, V1, P41, DOI 10.1109/68.91003
[9] EXTREME SELECTIVITY IN THE LIFT-OFF OF EPITAXIAL GAAS FILMS
YABLONOVITCH, E
GMITTER, T
HARBISON, JP
BHAT, R
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2222 - 2224

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