CRACK FORMATION AND THERMAL-STRESS RELAXATION OF GAAS ON SI GROWTH BY METALORGANIC VAPOR-PHASE EPITAXY

[1] ACKAERT A, 1989, Patent No. 2002056

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] HIGH-POWER GAAS/ALGAAS DIODE-LASERS GROWN ON A SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2552 - 2554

[4] DEMEESTER P, 1987, I PHYS C SER, V91, P183

[5] DUPUIS R, 1988, MATERIALS RES SOC S, V116

[6] NEAR-GAP PHOTOLUMINESCENCE OF GAAS GROWN DIRECTLY ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 5110 - 5116

[7] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616

[8] SHAW D, 1987, MATERIALS RES SOC S, V91

[9] SHAW D, 1989, HETEROSTRUCTURES SIL

[10] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 498 - 502

[1] ACKAERT A, 1989, Patent No. 2002056

[2] AKIYAMA M, 1984, J CRYST GROWTH, V68, P21, DOI 10.1016/0022-0248(84)90391-9

[3] HIGH-POWER GAAS/ALGAAS DIODE-LASERS GROWN ON A SI SUBSTRATE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1988, 53 (25) : 2552 - 2554

[4] DEMEESTER P, 1987, I PHYS C SER, V91, P183

[5] DUPUIS R, 1988, MATERIALS RES SOC S, V116

[6] NEAR-GAP PHOTOLUMINESCENCE OF GAAS GROWN DIRECTLY ON SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (10) : 5110 - 5116

[7] 14.5-PERCENT CONVERSION EFFICIENCY GAAS SOLAR-CELL FABRICATED ON SI SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (23) : 1614 - 1616

[8] SHAW D, 1987, MATERIALS RES SOC S, V91

[9] SHAW D, 1989, HETEROSTRUCTURES SIL

[10] EPITAXIAL-GROWTH AND MATERIAL PROPERTIES OF GAAS ON SI GROWN BY MOCVD [J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 498 - 502