共 7 条
- [1] CONTINUOUS-WAVE OPERATION OF EXTREMELY LOW-THRESHOLD GAAS/ALGAAS BROAD-AREA INJECTION-LASERS ON (100) SI SUBSTRATES AT ROOM-TEMPERATURE[J]. OPTICS LETTERS, 1987, 12 (10) : 812 - 813CHEN, HZGHAFFARI, AWANG, HMORKOC, HYARIV, A
- [2] LOW-THRESHOLD GAAS/ALGAAS LASERS GROWN ON SI BY ORGANOMETALLIC VAPOR-PHASE EPITAXY[J]. APPLIED PHYSICS LETTERS, 1988, 52 (14) : 1114 - 1115CHOI, HKLEE, JWSALERNO, JPCONNORS, MKTSAUR, BYFAN, JCC
- [3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS DOUBLE-HETEROSTRUCTURE LEDS AND SI MOSFETS[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (09) : 500 - 502CHOI, HKTURNER, GWWINDHORN, THTSAUR, BY
- [4] STABILITY OF 300-K CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL LASERS GROWN ON SI[J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1271 - 1273DEPPE, DGNAM, DWHOLONYAK, NHSIEH, KCMATYI, RJSHICHIJO, HEPLER, JECHUNG, HF
- [5] ROOM-TEMPERATURE CONTINUOUS OPERATION OF P-N ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN ON SI[J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 637 - 639DEPPE, DGHOLONYAK, NNAM, DWHSIEH, KCJACKSON, GSMATYI, RJSHICHIJO, HEPLER, JECHUNG, HF
- [6] KRESSEL H, 1977, SEMICONDUCTOR LASERS, P215
- [7] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 309 - 311WINDHORN, THMETZE, GMTSAUR, BYFAN, JCC