NEAR-GAP PHOTOLUMINESCENCE OF GAAS GROWN DIRECTLY ON SILICON

被引：20

作者：

HARRIS, TD ^{[1
]}

LAMONT, MG ^{[1
]}

SAUER, R ^{[1
]}

LUM, RM ^{[1
]}

KLINGERT, JK ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 10期

关键词：

D O I：

10.1063/1.342418

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5110 / 5116

页数：7

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