GAAS SINGLE-QUANTUM WELL GRIN-SCH RIDGE LASERS GROWN ON INP BY MOVPE

被引：3

作者：

VANACKERE, M

ACKAERT, A

MOERMAN, I

LOOTENS, D

DEMEESTER, P

VANDAELE, P

BAETS, R

LAGASSE, P

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 01期

关键词：

D O I：

10.1049/el:19890034

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：47 / 48

页数：2

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[1] KASAHARA K, 1987, I PHYS C SER, V91, P195
[2] ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS
LAU, KY
DERRY, PL
YARIV, A
[J]. APPLIED PHYSICS LETTERS, 1988, 52 (02) : 88 - 90
[3] NARROW STRIPE GRADED BARRIER SINGLE QUANTUM-WELL LASERS - THRESHOLD CURRENT CONSIDERATIONS
PATEL, NB
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) : 988 - 992
[4] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (03) : 217 - 219
[5] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
VANDERZIEL, JP
DUPUIS, RD
LOGAN, RA
PINZONE, CJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 89 - 91
[6] ALGAAS DOUBLE-HETEROSTRUCTURE DIODE-LASERS FABRICATED ON A MONOLITHIC GAAS/SI SUBSTRATE
WINDHORN, TH
METZE, GM
TSAUR, BY
FAN, JCC
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 309 - 311