ALL-OPTICAL BISTABLE SWITCHING IN AN ACTIVE INGAAS QUANTUM-WELL WAVE-GUIDE

被引：5

作者：

LIKAMWA, P

MILLER, A

OGAWA, M

PARK, RM

机构：

[1] UNIV CENT FLORIDA,DEPT PHYS,ORLANDO,FL 32826

[2] UNIV FLORIDA,DEPT MAT SCI & ENGN,GAINESVILLE,FL 32611

[3] UNIV CENT FLORIDA,DEPT ELECT ENGN,ORLANDO,FL 32826

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 06期

关键词：

D O I：

10.1109/68.91016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bistability has been observed in the amplified optical signal passing through an active InGaAs strained quantumwell waveguide at a wavelength of 960 nm. The device, which contained a single 50-angstrom strained InGaAs well sandwiched between two 0.1-mu-m GaAs barrier layers, was electrically biased to 80% of the threshold current required for lasing.

引用

页码：507 / 509

页数：3

共 7 条

[1] A COMPARISON OF ACTIVE AND PASSIVE OPTICAL BISTABILITY IN SEMICONDUCTORS [J].