HIGH-PERFORMANCE WN-GATE MISFETS FABRICATED FROM MOVPE WAFERS

被引：7

作者：

WOLNY, M

AGUILA, T

DECONINCK, P

MORONI, D

ANDRE, JP

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 21期

关键词：

SEMICONDUCTING ALUMINUM COMPOUNDS;

D O I：

10.1049/el:19870786

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

WN-gate heterojunction MISFETs with an AlGaAs layer as insulator have been fabricated on MOVPE wafers; they exhibit high transconductance (up to 460 mS/mm) and high V//t uniformity.

引用

页码：1127 / 1128

页数：2

共 5 条

[1] SELF-ALIGNED GAAS GATE HETEROJUNCTION SISFET [J].

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SCHAFF, WJ ;

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EASTMAN, LF .

ELECTRONICS LETTERS, 1987, 23 (03) :105-106

[2] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J].

CIRILLO, NC ;

SHUR, MS ;

VOLD, PJ ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :645-647

[3] LARGE TRANSCONDUCTANCE N+-GE GATE ALGAAS/GAAS MISFET WITH THIN GATE INSULATOR [J].

MAEZAWA, K ;

MIZUTANI, T ;

ARAI, K ;

YANAGAWA, F .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (07) :454-456

[4]

SHENG NH, 1986, P GAAS IC S, P97

[5]

WOLNY M, 1986, AUG P INT C HIGH SPE, P148

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