LARGE TRANSCONDUCTANCE N+-GE GATE ALGAAS/GAAS MISFET WITH THIN GATE INSULATOR

被引：15

作者：

MAEZAWA, K

MIZUTANI, T

ARAI, K

YANAGAWA, F

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 07期

关键词：

D O I：

10.1109/EDL.1986.26434

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：454 / 456

页数：3

共 8 条

[1]

ARAI K, 1985, 12TH INT S GAAS REL

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[4] A NEW TWO-DIMENSIONAL ELECTRON-GAS FIELD-EFFECT TRANSISTOR FABRICATED ON UNDOPED ALGAAS-GAAS HETEROSTRUCTURE [J].

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SHIRAKI, Y .

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[5]

LEE K, 1983, IEEE T ELECTRON DEV, V30, P207

[6] N+-GAAS UNDOPED GAALAS UNDOPED GAAS FIELD-EFFECT TRANSISTOR [J].

MATSUMOTO, K ;

OGURA, M ;

WADA, T ;

HASHIZUME, N ;

YAO, T ;

HAYASHI, Y .

ELECTRONICS LETTERS, 1984, 20 (11) :462-463

[7] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

MIMURA, T ;

HIYAMIZU, S ;

FUJII, T ;

NANBU, K .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) :L225-L227

[8] A GAAS GATE HETEROJUNCTION FET [J].

SOLOMON, PM ;

KNOEDLER, CM ;

WRIGHT, SL .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :379-381

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