PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE

被引：68

作者：

KOBAYASHI, I

OGAWA, T

HOTTA, S

机构：

[1] Display Research Laboratory, Audio Video Research Center, Matsushita Electric Industrial Co, Osaka

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 2A期

关键词：

PLASMA-ENHANCED CVD; SILICON NITRIDE; INTERNAL STRESS; COMPOSITION; TFT; RELIABILITY;

D O I：

10.1143/JJAP.31.336

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optimum condition of plasma-enhanced chemical vapor deposition to deposite silicon nitride (SiNx) film and its application as a gate insulator of a-Si thin-film transistor (TFT) have been investigated. The internal stress of SiNx in the range of 4.3 x 10(9) dyn/cm2 tensile to 8.0 x 10(9) dyn/cm2 compressive is found to be controllable by changing the ratio of H-2 and N2 in the source gases without affecting the optical band gap. Satisfactory TFT characteristics and high reliability are realized by using a gate insulator of SiNx having either stoichiometric or N-rich composition which shows the large optical band gap.

引用

页码：336 / 342

页数：7

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