BE DIFFUSION AT THE EMITTER-BASE JUNCTION OF GRADED ALINAS/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：9

作者：

METZGER, RA

HAFIZI, M

WILSON, RG

STANCHINA, WE

JENSEN, JF

MCCRAY, LG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 06期

关键词：

D O I：

10.1116/1.586065

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Compositional grading at the emitter-base junction of Npn heterojunction bipolar transistors (HBTs) has been achieved by using a nine period graded gap AlInAs/GaInAs superlattice of 300 angstrom thickness. The as designed 500 angstrom base region was doped using Be fluxes that ranged from 0.8 x 10(12) to 1.4 x 10(12) atoms/cm2 s. Growth over this flux range resulted in a base doping of 4.5 x 10(19) cm-3 with the highest flux producing an additional 160 angstrom of Be penetration into the graded region as compared with the lowest flux. The dc and rf characteristics of the graded emitter-base HBTs are found to be tolerant to this degree of Be outdiffusion.

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页码：2347 / 2350

页数：4

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