CONTROL OF BERYLLIUM DIFFUSION IN ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS THROUGH USE OF LOW-TEMPERATURE GAINAS

被引：7

作者：

METZGER, RA ^{[1
]}

LIU, T ^{[1
]}

STANCHINA, WE ^{[1
]}

WILSON, RG ^{[1
]}

JENSEN, JF ^{[1
]}

MCCRAY, LG ^{[1
]}

PIERCE, MW ^{[1
]}

KARGODORIAN, TV ^{[1
]}

ALLEN, YK ^{[1
]}

LOU, PF ^{[1
]}

MISHRA, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,SANTA BARBARA,CA 93106

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.586136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low-temperature (LT) GaInAs has been used to inhibit the diffusion of Be from the base to emitter in Npn AlInAs/GaInAs/GaInAs heterostructure bipolar transistor (HBTs) grown lattice matched to InP substrates by molecular-beam epitaxy (MBE). A series of Be planar-doped spikes (1.0-0.017 monolayers) were grown in LT GaInAs (over a temperature range of 225-445-degrees-C as compared to normal growth at 500-degrees-C) and it was determined by secondary-ion mass spectroscopy (SIMS) that the Be full width at half-maximum decreased by a factor of 3 for LT GaInAs grown below 350-degrees-C. A series of LT GaInAs spacers of varying thicknesses (up to 150 angstrom) and Be dopings (2 x 10(18)-1 x 10(20) cm-3) were grown at 300-degrees-C and placed at the emitter-base junction of Npn HBTs. The optimum spacer configuration as determined by Be penetration into the AlInAs emitter, and rf performance, was with a LT GaInAs spacer of 150 angstrom and Be doped at 2 x 10(18) cm-3 producing no observable (determined by SIMS) Be penetration into the emitter and an f(max) of 73 GHz and f(t) of 110 GHz.

引用

页码：859 / 862

页数：4

共 14 条

[1] THE EFFECT OF INP SUBSTRATE MISORIENTATION ON GALNAS-ALLNAS INTERFACE AND ALLOY QUALITY [J].