A NEW APPROACH TO AUGER RECOMBINATION - APPLICATION TO LEAD CHALCOGENIDES

被引：30

作者：

ZIEP, O

MOCKER, M

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1980年 / 98卷 / 01期

关键词：

D O I：

10.1002/pssb.2220980113

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：133 / 142

页数：10

共 35 条

[1]

AFANASEVA EA, 1973, FIZ TEKH POLUPROV, V7, P1133

[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS [J].

ANTONCIK, E ;

LANDSBERG, PT .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527) :337-&

[3] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[4] SINGLE-PARTICLE GREENS FUNCTION IN ELECTRON-PLASMON APPROXIMATION [J].

BERGERSEN, B ;

KUS, FW ;

BLOMBERG, C .

CANADIAN JOURNAL OF PHYSICS, 1973, 51 (01) :102-110

[5]

BONCHBRUEVICH VL, 1961, METOD FUNKTSII GRINA

[6]

CUFF KF, 1964, 7 P INT C PHYS SEM, P677

[7] SINGLE-LO-PHONON AND SINGLE-LO-PLASMON RECOMBINATION CHANNELS AT NARROW-BANDGAPS [J].

DORNHAUS, R ;

NIMTZ, G .

SOLID STATE COMMUNICATIONS, 1978, 27 (05) :575-578

[8] STIMULATED PLASMON EMISSION IN SEMICONDUCTORS [J].

ELCI, A .

PHYSICAL REVIEW B, 1979, 19 (08) :4181-4197

[9] ELECTRON-HOLE RECOMBINATION VIA PLASMON EMISSION IN NARROW-GAP SEMICONDUCTORS [J].

ELCI, A .

PHYSICAL REVIEW B, 1977, 16 (12) :5443-5451

[10] AUGER RECOMBINATION AND JUNCTION RESISTANCE IN LEAD-TIN TELLURIDE [J].

EMTAGE, PR .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) :2565-2568

← 1 2 3 4 →