DESIGN FOR SILICON INFRARED SENSING MOSFET

被引：11

作者：

FORBES, L ^{[1
]}

YEARGAN, JR ^{[1
]}

机构：

[1] UNIV ARKANSAS, DEPT ELECT ENGN, FAYETTEVILLE, AR 72701 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1974年 / ED21卷 / 08期

关键词：

D O I：

10.1109/T-ED.1974.17950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：459 / 462

页数：4

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[10] THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].

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