THEORETICAL AND MEASURED CHARACTERISTICS OF METAL(COSI2)-INSULATOR(CAF2) RESONANT-TUNNELING TRANSISTORS AND THE INFLUENCE OF PARASITIC ELEMENTS

被引：12

作者：

SUEMASU, T

KOHNO, Y

SAITOH, W

WATANABE, M

ASADA, M

机构：

[1] Department of Electrical and Electronic Engineering, Tokyo Institute of Technology

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 12期

关键词：

D O I：

10.1109/16.477780

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the theoretical and measured characteristics of triple-barrier metal(CoSi2)-insulator(CaF2) (M-I) resonant tunneling transistors (RTT) grown on an n-Si(111) substrate, and the influence of their parasitic elements on the measured characteristics. First, we analyze theoretical characteristics of an M-I RTT, and then show fabrication process and current-voltage (I-V) characteristics obtained at 77 K, in which several degradations are observed: large resonance voltage, low peak-to-valley (P-V) ratios at negative differential resistance (NDR), and reverse base current, Analysis, taking several parasitic elements (e,g,, base resistance, substrate resistance and leakage currents connected to the intrinsic transistor) into account, explains observed characteristics well, Finally, we show the first transistor action with large P-V ratios at 300 K, which is achieved by reducing collector-emitter leakage currents.

引用

页码：2203 / 2210

页数：8

共 20 条

[1] RESONANT TUNNELING TRANSISTOR WITH QUANTUM WELL BASE AND HIGH-ENERGY INJECTION - A NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE [J].