MONTE-CARLO INVESTIGATION OF MINORITY-ELECTRON TRANSPORT IN IN0.53GA0.47AS

[1] HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1193 - 1197

[2] VELOCITY-FIELD CHARACTERISTICS OF MINORITY-CARRIERS (ELECTRONS) IN P-IN0.53GA0.47AS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 569 - 572

[3] GRUBIN HL, 1985, VLSI ELECTRONICS MIC, V10, P237

[4] NEGATIVE ABSOLUTE MOBILITY OF MINORITY ELECTRONS IN GAAS QUANTUM-WELLS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (25) : 2736 - 2739

[5] HOPFEL RA, 1986, PHYS REV LETT, V56, P2045

[6] ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY [J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 470 - 472

[7] Littlejohn M. A., 1982, GaInAsP alloy semiconductors, P243

[8] ELECTRON-HOLE INTERACTION AND HIGH-FIELD TRANSPORT OF PHOTOEXCITED ELECTRONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) : 5330 - 5336

[9] TIME-OF-FLIGHT MEASUREMENTS OF MINORITY-CARRIER TRANSPORT IN P-SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1540 - 1541

[10] IONIZED IMPURITY SCATTERING IN MONTE-CARLO CALCULATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 813 - 815

[1] HOT-ELECTRON TRANSPORT IN IN0.53GA0.47AS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (12) : 1193 - 1197

[2] VELOCITY-FIELD CHARACTERISTICS OF MINORITY-CARRIERS (ELECTRONS) IN P-IN0.53GA0.47AS [J]. APPLIED PHYSICS LETTERS, 1981, 39 (07) : 569 - 572

[3] GRUBIN HL, 1985, VLSI ELECTRONICS MIC, V10, P237

[4] NEGATIVE ABSOLUTE MOBILITY OF MINORITY ELECTRONS IN GAAS QUANTUM-WELLS [J]. PHYSICAL REVIEW LETTERS, 1986, 56 (25) : 2736 - 2739

[5] HOPFEL RA, 1986, PHYS REV LETT, V56, P2045

[6] ELECTRON-DRIFT VELOCITY-MEASUREMENT IN COMPOSITIONALLY GRADED ALXGA1-XAS BY TIME-RESOLVED OPTICAL PICOSECOND REFLECTIVITY [J]. APPLIED PHYSICS LETTERS, 1982, 41 (05) : 470 - 472

[7] Littlejohn M. A., 1982, GaInAsP alloy semiconductors, P243

[8] ELECTRON-HOLE INTERACTION AND HIGH-FIELD TRANSPORT OF PHOTOEXCITED ELECTRONS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (12) : 5330 - 5336

[9] TIME-OF-FLIGHT MEASUREMENTS OF MINORITY-CARRIER TRANSPORT IN P-SILICON [J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1540 - 1541

[10] IONIZED IMPURITY SCATTERING IN MONTE-CARLO CALCULATIONS [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (03) : 813 - 815