TIME-OF-FLIGHT MEASUREMENTS OF MINORITY-CARRIER TRANSPORT IN P-SILICON

[1] AN EMPIRICAL FIT TO MINORITY HOLE MOBILITIES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 231 - 233

[2] THE EFFECT OF ELECTRON-HOLE SCATTERING ON MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 183 - 186

[3] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[4] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[5] MCKELVEY JP, 1966, SOLID STATE SEMICOND, P342

[6] ELECTRON-HOLE SCATTERING AND MINORITY CARRIER MOBILITY IN GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (2-3) : 139 - 149

[7] MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 949 - 955

[8] MEASUREMENT OF ELECTRON-MOBILITY IN P-SI BY TIME-OF-FLIGHT TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (06): : 661 - 665

[9] NELSON DF, 1982, PHYSICS SUBMICRON ST

[10] THE DRIFT MOBILITY OF ELECTRONS AND HOLES IN GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 207 - 219

[1] AN EMPIRICAL FIT TO MINORITY HOLE MOBILITIES [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 231 - 233

[2] THE EFFECT OF ELECTRON-HOLE SCATTERING ON MINORITY-CARRIER TRANSPORT IN BIPOLAR-TRANSISTORS [J]. SOLID-STATE ELECTRONICS, 1985, 28 (1-2) : 183 - 186

[3] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[4] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) : 1825 - +

[5] MCKELVEY JP, 1966, SOLID STATE SEMICOND, P342

[6] ELECTRON-HOLE SCATTERING AND MINORITY CARRIER MOBILITY IN GERMANIUM [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 18 (2-3) : 139 - 149

[7] MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICON [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (05) : 949 - 955

[8] MEASUREMENT OF ELECTRON-MOBILITY IN P-SI BY TIME-OF-FLIGHT TECHNIQUE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (06): : 661 - 665

[9] NELSON DF, 1982, PHYSICS SUBMICRON ST

[10] THE DRIFT MOBILITY OF ELECTRONS AND HOLES IN GERMANIUM AT LOW TEMPERATURES [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (3-4) : 207 - 219