AN EMPIRICAL FIT TO MINORITY HOLE MOBILITIES

[1] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 569 - 576

[5] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1649 - &

[6] DIRECT MEASUREMENT OF VERY SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3249 - &

[7] HEILBORN J, 1982, SCI ENG PROGRAMS APP, P19

[8] BETWEEN CARRIER DISTRIBUTIONS AND DOPANT ATOMIC DISTRIBUTION IN BEVELED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1499 - 1510

[9] THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 447 - 450

[10] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616

[1] HOLE AND ELECTRON MOBILITIES IN HEAVILY DOPED SILICON - COMPARISON OF THEORY AND EXPERIMENT [J]. SOLID-STATE ELECTRONICS, 1983, 26 (12) : 1157 - 1166

[2] MINORITY-CARRIER DIFFUSION-COEFFICIENTS IN HIGHLY DOPED SILICON [J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 170 - 172

[3] AUGER COEFFICIENTS FOR HIGHLY DOPED AND HIGHLY EXCITED SILICON [J]. APPLIED PHYSICS LETTERS, 1977, 31 (05) : 346 - 348

[4] CARRIER RECOMBINATION AND LIFETIME IN HIGHLY DOPED SILICON [J]. SOLID-STATE ELECTRONICS, 1983, 26 (06) : 569 - 576

[5] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1649 - &

[6] DIRECT MEASUREMENT OF VERY SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) : 3249 - &

[7] HEILBORN J, 1982, SCI ENG PROGRAMS APP, P19

[8] BETWEEN CARRIER DISTRIBUTIONS AND DOPANT ATOMIC DISTRIBUTION IN BEVELED SILICON SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1499 - 1510

[9] THEORY OF LIFETIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - TRANSIENT ANALYSIS [J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 447 - 450

[10] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1977, 20 (07) : 609 - 616