DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF ELECTRON-MOBILITY AND RESISTIVITY IN N-TYPE SILICON

被引：194

作者：

LI, SS ^{[1
]}

THURBER, WR ^{[1
]}

机构：

[1] NBS,DIV ELECTR TECHNOL,SEMICONDUCT PROCESSING SECT,WASHINGTON,DC 20234

来源：

关键词：

D O I：

10.1016/0038-1101(77)90100-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：609 / 616

页数：8

共 33 条

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[7] BUEHLER MG, 1973, NBS788 TECH NOT, P12
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[9] TEMPERATURE COEFFICIENT OF RESISTIVITY OF SILICON AND GERMANIUM NEAR ROOM TEMPERATURE
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SWARTZEN.LJ
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (07) : 639 - &
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