MEASUREMENT OF THE MINORITY-CARRIER TRANSPORT PARAMETERS IN HEAVILY DOPED SILICON

被引：96

作者：

MERTENS, RP

VANMEERBERGEN, JL

NIJS, JF

VANOVERSTRAETEN, RJ

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 05期

关键词：

D O I：

10.1109/T-ED.1980.19962

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：949 / 955

页数：7

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