TIC AND TIN COATINGS FORMED ON SI3N4-TIC COMPOSITE CERAMICS BY CHEMICAL VAPOR-DEPOSITION

被引:22
作者
KIM, DW
PARK, YJ
LEE, JG
CHUN, JS
机构
[1] Korea Advanced Inst of Science &, Technology, Korea, Republic of
关键词
Ceramic Materials - Coatings - Silicon Nitride - Spectroscopy; Auger Electron;
D O I
10.1016/0040-6090(88)90686-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium carbide (TiC) and titnaium nitride (TiN) films were deposited on Si3N4-TiC composite cutting tools by chemical vapor deposition using TiCl4-CH4-H2 and TiCl4-H2-N2 gas mixtures respectively. An Auger electron spectroscopy survey was performed in order to find out the non-metal to metal ratio of the coated layer at various deposition conditions. Nearly stoichiometric films could be obtained with mC:Ti=1.15-1.61 for TiC and with mN:Ti=25-28 for TiN. The microstructure and thermal shock resistance of the coated layer were also investigated. Experimental results show that TiC coatings have an equiaxed structure and TiN coatings have a columnar structure with a (220) preferred orientation. Also, TiC coatings on Si3N4-TiC ceramics have more resistance to thermal shock than do TiN coatings.
引用
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页码:149 / 161
页数:13
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