TEMPERATURE-DEPENDENCE OF INTERSUBBAND ABSORPTION IN INGAAS INALAS MULTIQUANTUM WELLS

被引：6

作者：

ASAI, H

KAWAMURA, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 11期

关键词：

D O I：

10.1063/1.346936

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intersubband absorption in In0.53Ga0.47As/In 0.52Al0.48As multiquantum wells is investigated at temperatures ranging from 5 to 300 K. Two absorption peaks from the first to the second subband E21 and from the second to the third E32 are observed at 300 K. As temperature is reduced to 5 K the E32 peak disappears, while the E21 absorption intensity remains almost constant. This temperature dependence can be explained by a theoretical calculation of electron distribution in each subband.

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页码：5890 / 5892

页数：3

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